K6F4016R4E-F Datasheet | Samsung Semiconductor

K6F4016R4E Family CMww Ow.SDat Sa SRhe Aet4MU. Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize Draft Date Remark November 10, 2000 Preliminary March 12, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.0 March 2001 K6F4016R4E Family CMww Ow.SDat Sa SRhe Aet4MU. 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Features - Process Technology: Full CMOS - Organization: 256K x16 bit - Power Supply Voltage: 1.65~2.20V - Low Data Retention Voltage: 1.0V(Min) - Three State Outputs - Package Type: 48-TBGA-6.00x7.00 GENERAL DESCRIPTION The K6F4016R4E families are fabricated by SAMSUNG′s...