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K6F4016R4E-F Datasheet, Samsung semiconductor

K6F4016R4E-F ram equivalent, 256k x16 bit super low power and low voltage full cmos static ram.

K6F4016R4E-F Avg. rating / M : 1.0 rating-13

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K6F4016R4E-F Datasheet

Features and benefits


* Process Technology: Full CMOS
* Organization: 256K x16 bit
* Power Supply Voltage: 1.65~2.20V
* Low Data Retention Voltage: 1.0V(Min)
* Three State .

Description

The K6F4016R4E families are fabricated by SAMSUNG′s advan.

Image gallery

K6F4016R4E-F Page 1 K6F4016R4E-F Page 2 K6F4016R4E-F Page 3

TAGS

K6F4016R4E-F
256K
x16
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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