K6F2008T2E - 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

K6F2008T2E Description

K6F2008T2E Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision.
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

K6F2008T2E Features

* Process Technology: Full CMOS
* Organization: 256Kx8
* Power Supply Voltage: 2.7 ~ 3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

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K6F2008T2E Datasheet Preview — Preview of K6F2008T2E PDF

Datasheet Details

Part number: K6F2008T2E
Manufacturer: Samsung semiconductor
File Size: 128.30 KB
Datasheet: K6F2008T2E_Samsungsemiconductor.pdf
Description: 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

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256K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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