K6F2008T2E
Description
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design.
Key Features
- Process Technology: Full CMOS
- Organization: 256Kx8
- Power Supply Voltage: 2.7 ~ 3.6V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 32-TSOP1-0813.4F Preliminary CMOS SRAM
