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K4S643233H-FF Datasheet, Samsung semiconductor

K4S643233H-FF mobile-sdram equivalent, mobile-sdram.

K4S643233H-FF Avg. rating / M : 1.0 rating-13

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K4S643233H-FF Datasheet

Features and benefits


* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1.

Application

ORDERING INFORMATION Part No. K4S643233H-F(H)E/N/G/C/L/F60 K4S643233H-F(H)E/N/G/C/L/F75 K4S643233H-F(H)E/N/G/C/L/F1H K.

Description

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo.

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TAGS

K4S643233H-FF
Mobile-SDRAM
K4S643233H-FC
K4S643233H-FE
K4S643233H-FG
Samsung semiconductor

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