K4S56323LF-FR sdram equivalent, 2m x 32bit x 4 banks mobile sdram.
* VDD/VDDQ = 2.5V/2.5V
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 &.
ORDERING INFORMATION
Part No. K4S56323LF-F(H)E/N/S/C/L/R60 K4S56323LF-F(H)E/N/S/C/L/R75 K4S56323LF-F(H)E/N/S/C/L/R1H K.
The K4S56323LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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