K4S56163LF-XZF Datasheet | Samsung Semiconductor

FEATURES - 2.5V power supply. - LVCMOS patible with multiplexed address. - Four banks operation. - MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). - EMRS cycle with address key programs. - All inputs are sampled at the positive going edge of the system clock. - Burst read single-bit write operation. - Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh) - DQM for masking. - Auto refresh. - - - - 64ms refresh period (8K cycle). mercial Temperature Operation (-25°C ~ 70°C). Extended Temperature Operation (-25°C ~ 85°C). 54Balls BOC with 0.8mm ball pitch ( -X : Leaded, -Z : Lead Free). Mobile-SDRAM .. GENERAL DESCRIPTION The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. ORDERING INFORMATION Part No. K4S56163LF-X(Z)E/N/G/C/L/F75 K4S56163LF-X(Z)E/N/G/C/L/F1H K4S56163LF-X(Z)E/N/G/C/L/F1L Max Freq. 133MHz(CL=3) 105MHz(CL=2) 105MHz(CL=3)- 1 LVCMOS 54 BOC Leaded (Lead Free) Interface Package - X(Z)E/N/G : Normal / Low / Low Power, Extended Temperature(-25°C ~ 85°C) - X(Z)C/L/F : Normal / Low / Low Power, mercial Temperature(-25°C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained...