K4S56163LF-XE - 4M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

The K4S56163LF-XE by Samsung semiconductor is a 4M x 16Bit x 4 Banks Mobile SDRAM. Below is the official datasheet preview.

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K4S56163LF-XE 4M x 16Bit x 4 Banks Mobile SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S56163LF-XE** 4M x 16Bit x 4 Banks Mobile SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S56163LF-XE
Manufacturer	Samsung semiconductor
File Size	143.57 KB
Description	4M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4S56163LF-XE_Samsungsemiconductor.pdf
Additional preview pages of the K4S56163LF-XE datasheet.

K4S56163LF-XE Product details

Description

The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung semiconductor

K4S56163LF-XC - 4M x 16Bit x 4 Banks Mobile SDRAM
K4S56163LF-XF - 4M x 16Bit x 4 Banks Mobile SDRAM
K4S56163LF-XG - 4M x 16Bit x 4 Banks Mobile SDRAM
K4S56163LF-XL - 4M x 16Bit x 4 Banks Mobile SDRAM
K4S56163LF-XN - 4M x 16Bit x 4 Banks Mobile SDRAM
K4S56163LF-XZC - 4M x 16Bit x 4 Banks Mobile SDRAM

Published: Mar 25, 2010 |