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K4S560832E-NCL75 Datasheet, Samsung semiconductor

K4S560832E-NCL75 e-die equivalent, sdram 256mb e-die.

K4S560832E-NCL75 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 207.41KB)

K4S560832E-NCL75 Datasheet
K4S560832E-NCL75 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 207.41KB)

K4S560832E-NCL75 Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

Ordering Information Part No. K4S560432E-NC(L)75 K4S560832E-NC(L)75 K4S561632E-NC(L)60/75 Orgainization 64M x 4 32M x.

Description

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous de.

Image gallery

K4S560832E-NCL75 Page 1 K4S560832E-NCL75 Page 2 K4S560832E-NCL75 Page 3

TAGS

K4S560832E-NCL75
SDRAM
256Mb
E-die
Samsung semiconductor

Manufacturer


Samsung semiconductor

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