K4D26323QG sdram equivalent, 128mbit gddr sdram.
* 1.8V ± 0.1V power supply for device operation
* 1.8V ± 0.1V power supply for I/O interface
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* No Wrtie-Interrupted by Read Function
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where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D26323QG is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data Str.
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