K1S64161CC datasheet, memory equivalent, Samsung semiconductor

K1S64161CC memory equivalent, 4mx16 bit page mode uni-transistor random access memory.

Features and benefits

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* UtRAM GENERAL DESCRIPTION The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device s.

Description

The K1S64161CC is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user interface. The device al.

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