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M53230810DB0 Datasheet

Manufacturer: Samsung Semiconductor
M53230810DB0 datasheet preview

M53230810DB0 Details

Part number M53230810DB0
Datasheet M53230810DB0 M53230800DB0 Datasheet (PDF)
File Size 427.36 KB
Manufacturer Samsung Semiconductor
Description (M532308x0DB0/DW0) DRAM Module
M53230810DB0 page 2 M53230810DB0 page 3

M53230810DB0 Overview

The Samsung M5323080(1)0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0D consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230810DB0 Key Features

  • Part Identification
  • M53230800DW0-C(4096 cycles/64ms Ref, SOJ, Solder)
  • M53230800DB0-C(4096 cycles/64ms Ref, SOJ, Gold)
  • M53230810DW0-C(2048 cycles/32ms Ref, SOJ, Solder)
  • M53230810DB0-C(2048 cycles/32ms Ref, SOJ, Gold)
  • Extended Data Out
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply

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