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M53230810CW0 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53230810CW0 datasheet preview

Datasheet Details

Part number M53230810CW0
Datasheet M53230810CW0 M53230800CB0 Datasheet (PDF)
File Size 420.65 KB
Manufacturer Samsung Semiconductor
Description (M532308x0CB0/CW0) DRAM Module
M53230810CW0 page 2 M53230810CW0 page 3

M53230810CW0 Overview

The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53230810CW0 Key Features

  • Part Identification
  • M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder)
  • M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold)
  • M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder)
  • M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold)
  • Extended Data Out
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

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Part Number Description
M53230810CB0 (M532308x0CB0/CW0) DRAM Module
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M53230810DW0 (M532308x0DB0/DW0) DRAM Module
M53230800CB0 (M532308x0CB0/CW0) DRAM Module
M53230800CW0 (M532308x0CB0/CW0) DRAM Module
M53230800DB0 (M532308x0DB0/DW0) DRAM Module
M53230800DW0 (M532308x0DB0/DW0) DRAM Module
M53230804BT0-C (M53230804BT0-C/BY0) DRAM Module
M53230804BY0 (M53230804BT0-C/BY0) DRAM Module
M53230804CT0-C (M53230804CT0-C/CY0) DRAM Module

M53230810CW0 Distributor

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