M53230810CW0 Datasheet | Samsung Semiconductor

DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22u F decoupling capacitor is mounted on the printed circuit board for each DRAM. The M5323080(1)0C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230800CW0/CB0 M53230810CW0/CB0 FEATURES - Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold) - Extended Data Out - CAS-before-RAS refresh capability - RAS-only and Hidden refresh capability - TTL patible inputs and outputs - Single +5V±10% power supply PERFORMANCE RANGE Speed -50 -60 t RAC 50ns 60ns t CAC 13ns 15ns t RC 90ns 110ns t HPC 25ns 30ns - 1st Gen. JEDEC standard PDPin & pinout - PCB : Height(1000mil), double sided ponent PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 RAS1 RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC Vss CAS0 CAS2 CAS3 CAS1 RAS0 RAS1 NC W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss PIN NAMES Pin Name A0 - A11 Function Address Inputs(4K Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection . A0 - A10 DQ0 - DQ31 Data Shee RAS0, RAS1 CAS0 - CAS3 PD1 -PD4 Vcc Vss NC PRESENCE DETECT PINS (Optional) Pin PD1 PD2 PD3 PD4 50NS NC Vss Vss Vss 60NS NC Vss NC NC - Pin...