M53230804BY0, M53230804BT0-C Datasheet - Samsung Semiconductor

M53230804BY0 (M53230804BT0-C/BY0) DRAM Module

The Samsung M53230804BY0/BT0-C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M53230804BY0/BT0-C consists of four CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each.

www.DataSheet4U.com DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin(4Mx16 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53230804BY0/BT0-C Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Changed the parameter tCAC(access time from CAS) from 13ns to 15ns @ -5 in AC CHARACTERISTI.

M53230804BY0 Features

* Part Identification - M53230804BY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230804BT0-C(4K cycles/64ms Ref, TSOP, Gold)

* Extended Data Out Mode Operation

* CAS-before-RAS & Hidden Refresh capability

* RAS-only refresh capability

* TTL compatible inputs and

M53230804BT0-C_SamsungSemiconductor.pdf

M53230804BY0 Datasheet Preview — This datasheet PDF includes multiple part numbers: M53230804BY0, M53230804BT0-C. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

M53230804BY0, M53230804BT0-C

Manufacturer:

Samsung Semiconductor

File Size:

543.58 KB

Description:

(m53230804bt0-c/by0) dram module.

Note:

This datasheet PDF includes multiple part numbers: M53230804BY0, M53230804BT0-C.
Please refer to the document for exact specifications by model.

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M53230804BY0 M53230804BT0-C M53230804BT0-C BY0 DRAM Module Samsung Semiconductor

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