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KM68FS8100 - CMOS SRAM

General Description

The KM68FS8100 families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Key Features

  • Process Technology: Full CMOS.
  • Organization: 1M x8.
  • Power Supply Voltage: 2.3~2.7V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 48-FBGA-8.00x12.00 CMOS SRAM.

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Other Datasheets by Samsung Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary KM68FS8100 Family Document Title 1M x8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft Draft Date August 25, 1999 Remark Preliminary www.DataSheet4U.com The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.0 August 1999 Preliminary KM68FS8100 Family FEATURES • Process Technology: Full CMOS • Organization: 1M x8 • Power Supply Voltage: 2.3~2.7V • Low Data Retention Voltage: 1.5V(Min) • Three state output and TTL Compatible • Package Type: 48-FBGA-8.