* 3.3V ±5% power supply for device operation
* 2.5V ±5% power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
* MRS cy.

- 3 - Rev. 0.3 (May. 1999) KM432D2131 PIN CONFIGURATION (Top View) Target 64M DDR SGRAM DSF, MCL 52 80 79 78 7.

FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data St.

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