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KM23C8105ET - 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM

Download the KM23C8105ET datasheet PDF. This datasheet also covers the KM23C8105DT variant, as both devices belong to the same 8m-bit (1mx8 /512kx16) cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

Description

The KM23C8105D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode fu

Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time Random Access : 100ns(Max. ) Page Access : 30ns(Max. ).
  • 4 Words / 8 bytes page access.
  • Supply voltage : single +5V.
  • Current consumption Operating : 80mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23C8105D(E)T : 44-TSOP2-400 CMOS MASK ROM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM23C8105DT_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com KM23C8105D(E)T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +5V • Current consumption Operating : 80mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C8105D(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C8105D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.
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