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K3N5VU1000F-DGC - 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

This page provides the datasheet information for the K3N5VU1000F-DGC, a member of the K3N5V1000F-DC 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM family.

Datasheet Summary

Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or

Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
  • Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@CL=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
  • Supply voltage : single +3.0V/single +3.3V www. DataSheet4U. com.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N5V(U)1000.

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Datasheet preview – K3N5VU1000F-DGC

Datasheet Details

Part number K3N5VU1000F-DGC
Manufacturer Samsung Semiconductor
File Size 67.02 KB
Description 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM
Datasheet download datasheet K3N5VU1000F-DGC Datasheet
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Full PDF Text Transcription

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K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/single +3.3V www.DataSheet4U.com • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. K3N5V(U)1000F-DC : 42-DIP-600 -.
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