Datasheet Details
| Part number | K9F2G08U0B |
|---|---|
| Manufacturer | Samsung Electronics |
| File Size | 862.61 KB |
| Description | FLASH MEMORY |
| Datasheet |
 K9F2G08U0B Datasheet
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General Description
Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit.
Its NAND cell provides the most costeffective solution for the solid state application market.
Key Features
- Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V.
- Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit.
- Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
- Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
- Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase.
