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K9F2G08U0B Datasheet, Samsung Electronics

K9F2G08U0B memory equivalent, flash memory.

K9F2G08U0B Avg. rating / M : 1.0 rating-12

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K9F2G08U0B Datasheet

Features and benefits


* Voltage Supply - 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V - 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
* Organization - Memory Cell Array : (256M + 8M) x 8bit - Data .

Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

Description

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64).

Image gallery

K9F2G08U0B Page 1 K9F2G08U0B Page 2 K9F2G08U0B Page 3

TAGS

K9F2G08U0B
FLASH
MEMORY
K9F2G08U0A
K9F2G08U0C
K9F2G08U0M
Samsung Electronics

Manufacturer


Samsung Electronics
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