Part K8A5615ETA
Description Flash Memory
Manufacturer Samsung Electronics
Size 743.68 KB
Samsung Electronics
K8A5615ETA

Overview

  • Single Voltage, 1.7V to 1.95V for Read and Write operations
  • Organization - 16,772,216 x 16 bit ( Word Mode Only)
  • Read While Program/Erase Operation
  • Multiple Bank Architecture - 16 Banks (16Mb Partition)
  • OTP Block : Extra 256Byte block
  • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz)
  • Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap
  • Block Architecture - Eight 4Kword blocks and five hundreds eleven 32Kword blocks - Bank 0 contains eight 4 Kword blocks and th