K6F1008R2M Datasheet | Samsung Electronics

FEATURES - Process Technology: Full CMOS - Organization: 128K x8 bit - Power Supply Voltage K6F1008V2M Family: 3.0V ~ 3.6V K6F1008S2M Family: 2.3V ~ 3.3V K6F1008R2M Family: 1.8V ~ 2.7V - Low Data Retention Voltage: 1.5V(Min) - Three state output and TTL patible - Package Type: 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1-0813.4F, 48-CSP GENERAL DESCRIPTION The K6F1008V2M, K6F1008S2M and K6F1008R2M families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. .. PRODUCT FAMILY Power Dissipation Product Family Operating Temperature Vcc Range K6F1008V2M-C K6F1008S2M-C K6F1008R2M-C K6F1008V2M-I K6F1008S2M-I K6F1008R2M-I Industrial(-40~85 °C) mercial(0~70°C) 3.0~3.6V 2.3~3.3V 1.8~2.7V 3.0~3.6V 2.3~3.3V 1.8~2.7V Speed(ns) 701)/85@VCC=3.3±0.3V 70 /85@VCC=3.0±0.3V 1) Standby (ISB1, Max) Operating (ICC2, Max) 40m A 35m A 30m A PKG Type 32-SOP 32-TSOP1 Forward 32-s TSOP1 Forward 48-CSP 1201)/150@VCC=2.5±0.2V 300 @VCC=2.0±0.2V 1) 701)/85@VCC=3.3±0.3V 70 /85/100@VCC=3.0±0.3V 1) 5µ A2) 15m A 40m A 35m A 30m A 15m A 1201)/150@VCC=2.5±0.2V 300 @VCC=2.0±0.2V 1) 1. The parameter is measured with 30p F test load. 2. 1µA for super low power version with special handling. PIN DESCRIPTION N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8...