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K6F1008R2M Datasheet

Manufacturer: Samsung Electronics

This datasheet includes multiple variants, all published together in a single manufacturer document.

K6F1008R2M datasheet preview

Datasheet Details

Part number K6F1008R2M
Datasheet K6F1008R2M K6F1008S2M Datasheet (PDF)
File Size 191.02 KB
Manufacturer Samsung Electronics
Description SRAM
K6F1008R2M page 2 K6F1008R2M page 3

K6F1008R2M Overview

The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. The parameter is measured with 30pF test load.

K6F1008R2M Key Features

  • Process Technology: Full CMOS
  • Organization: 128K x8 bit
  • Low Data Retention Voltage: 1.5V(Min)
  • Three state output and TTL patible
  • Package Type: 32-SOP-525, 32-TSOP1-0820F, 32-TSOP1-0813.4F, 48-CSP
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