logo

K4S561632H Datasheet, Samsung Electronics

K4S561632H sdram equivalent, 256mb h-die sdram.

K4S561632H Avg. rating / M : 1.0 rating-12

datasheet Download

K4S561632H Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, .

Description

The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance.

Image gallery

K4S561632H Page 1 K4S561632H Page 2 K4S561632H Page 3

TAGS

K4S561632H
256Mb
H-Die
SDRAM
K4S561632A
K4S561632B
K4S561632C
Samsung Electronics

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts