• Part: K4S561632H
  • Description: 256Mb H-Die SDRAM
  • Manufacturer: Samsung Electronics
  • Size: 424.28 KB
K4S561632H Datasheet (PDF) Download
Samsung Electronics
K4S561632H

Description

The K4S560432H / K4S560832H / K4S561632H is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4 bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply
  • Four banks operation
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • Burst read single-bit write operation
  • DQM (x4,x8) & L(U)DQM (x16) for masking
  • Auto & self refresh
  • 64ms refresh period (8K Cycle)
  • Pb/Pb-free Package
  • RoHS pliant for Pb-free Package