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K4S561632H Datasheet 256mb H-die Sdram

Manufacturer: Samsung Electronics

Overview: www.DataSheet4U.com SDRAM 256Mb H-die (x4, x8, x16) CMOS SDRAM 256Mb H-die SDRAM Specification DataShee DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. DataSheet4U.com Rev. 1.0 October 2005 DataSheet 4 U .com www.DataSheet4U.com SDRAM 256Mb H-die (x4, x8, x16) Revision History Revision 0.0 (May. 2005) - First release. Revision 1.0 (October. 2005) - Final release. CMOS SDRAM et4U.com DataShee DataSheet4U.com DataSheet4U.com Rev. 1.0 October 2005 DataSheet 4 U .com www.DataSheet4U.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM (x4,x8) & L(U)DQM (x16) for masking.
  • Auto & self refresh.
  • 64ms.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Samsung semiconductor Logo K4S561632A 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S561632B 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung Logo K4S561632C 256Mbit SDRAM Samsung
Samsung semiconductor Logo K4S561632D 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Samsung semiconductor
Samsung semiconductor Logo K4S561632E-NC60 SDRAM 256Mb E-die Samsung semiconductor

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