M393A1G43DB1 Datasheet | Samsung Semiconductor

Rev. 1.8, Aug. 2016 M393A5143DB0 M393A1G40DB0 M393A1G40DB1 M393A1G43DB0 M393A1G43DB1 M393A2G40DB0 M393A2G40DB1 288pin Registered DIMM based on 4Gb D-die 78FBGA with Lead-Free & Halogen-Free (Ro HS pliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. (c) 2016 Samsung Electronics Co., Ltd. All rights reserved. -1- Registered DIMM datasheet Rev. 1.8 DDR4 SDRAM Revision History Revision No. 1.0 1.1 1.2 1.3 1.4 1.6 1.7 1.71 1.8 History - First SPEC. Release - Addition of IDD & IPP value of x8 Product - Correction of IPP value of x4 Product - Change of [Table6] Allowed time before ringback(t DVAC) for CK_t CK_c on page 17 - Addition of Slew Rate Definition for Single-ended Input Signals ( CMD /ADD ) on page 19 - Change of [Table 21] Silicon pad I/O Capacitance on page 30 - Change of Speed Bins and CL, t RCD, t RP, t RC and t RAS for corre sponding bin on page 31~34 - Change of [Table 26] Timing Parameters by...