K9W4G16U1M Datasheet | Samsung Semiconductor

K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5. 2001 Remark Advance Preliminary 1. 5th cycle of ID is changed : 40h --> 44h 1. Add WSOP Package Dimensions. 1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4016 --> 4036 1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30 Jan. 23. 2002 Preliminary 0.3 0.4 0.5 May. 29. 2002 Aug. 13. 2 002...