K9W4G16U1M Overview
IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Aug. 2001 Remark Advance Preliminary 0.2.
K9W4G16U1M datasheet by Samsung Semiconductor.
| Part number | K9W4G16U1M |
|---|---|
| Datasheet | K9W4G16U1M_Samsungsemiconductor.pdf |
| File Size | 641.65 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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IOL(R/B) of 1.8V device is changed. 8mA -->4mA Draft Date Aug. 2001 Remark Advance Preliminary 0.2.
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K9W4G08U1M | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9W8G08U1M | 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
| K9W8G16U1M | Nand Flash Memory |
| K9WAG08U1D | 4Gb D-die NAND Flash |
| K9WAG08U1E | 4Gb E-die NAND Flash |
| K9WAG08U1F | 4Gb F-die NAND Flash |
| K9WBG08U1M | FLASH MEMORY |