K8Q2815UQB memory equivalent, flash memory.
* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Endurance : 100,000 Program/Erase Cycles Minimum
* Organization
* Data Retention : 10 y.
where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, .
* Read While Program/Erase Operation
* Multiple Bank architectures (8 banks)
Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (32Kw x 48) Bank 2 : 24Mbit (32Kw x 48)
The K8Q2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-.
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