K7A403600M
K7A403600M is 128K x 36 Synchronous SRAM manufactured by Samsung Semiconductor.
Document Title
128Kx36-Bit Synchronous Pipelined Burst SRAM
128Kx36 Synchronous SRAM
Revision History
Rev. No. 0.0 0.1 0.2 0.3 History Initial draft Change 7.5 bin to 7.2 Change speed symbol 6.0/6.7/7.2/8.5 to 60/67/72/85 Draft Date May . 15. 1997 January . 13 . 1998 February. 02. 1998 Remark Preliminary Preliminary Preliminary Preliminary
Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change February. 12. 1998 Input/output leackage currant for ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1
- L ver.& ISB2
- L ver . Remove Low power version. Add 119BGA(7x17 Ball Grid Array Package)...
