K4T1G164QF Datasheet | Samsung Semiconductor

Rev. 1.2, Jul. 2011 K4T1G044QF K4T1G084QF K4T1G164QF 1Gb F-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free (Ro HS pliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2011 Samsung Electronics Co., Ltd. All rights reserved. -1- K4T1G044QF K4T1G084QF K4T1G164QF datasheet Revision History Revision No. 1.0 1.1 1.11 1.2 History - Final Spec. Release - Changed IDD current spec.(IDD3P-S/IDD3N/IDD4W) - Corrected typo VID(AC) Max. on page 14. - Corrected typo. Draft Date May. 2010 Aug. 2010 Sep. 2010 Jul. 2011 Rev. 1.2 DDR2 SDRAM Remark - Editor S.H.Kim S.H.Kim S.H.Kim J.Y.Lee -2- K4T1G044QF K4T1G084QF K4T1G164QF datasheet Rev. 1.2 DDR2 SDRAM Table Of Contents 1Gb F-die DDR2 SDRAM 1. Ordering Information ..................................................................................................................................................... 4 2. Key Features .........................