K4J52324QE sdram equivalent, 512mbit gddr3 sdram.
* 1.9V + 0.1V power supply for device operation for -BJ**
* 1.9V + 0.1V power supply for I/O interface for -BJ**
* 1.8V + 0.1V power supply for device operati.
where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
FOR 2M x 32Bit x 8 Bank GDDR3 SDRAM The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data .
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