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K4D551638H-LC50 - 256Mbit GDDR SDRAM

Download the K4D551638H-LC50 datasheet PDF. This datasheet also covers the K4D551638H variant, as both devices belong to the same 256mbit gddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

  • 2.35V ~ 2.7V power supply for device operation.
  • 2.35V ~ 2.7V power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2.5, 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave).
  • All inputs except data & DM are sampled at the positive going edge of the system clock.
  • Differential clock input.
  • No Write-Interrupted by Read F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4D551638H-Samsung.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K4D551638H 256M GDDR SDRAM 256Mbit GDDR SDRAM Revision 1.3 April 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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