K4D551638H-LC50 sdram equivalent, 256mbit gddr sdram.
* 2.35V ~ 2.7V power supply for device operation
* 2.35V ~ 2.7V power supply for I/O interface
* SSTL_2 compatible inputs/outputs
* 4 banks operation
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where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.
FOR 4M x 16Bit x 4 Bank GDDR SDRAM
The K4D551638H is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous features with Data S.
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