IRFIZ24A datasheet, mosfet equivalent, Samsung

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Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175¡ ÉOperating Temperature Lower Leaka.

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TAGS

IRFIZ24A

Power

MOSFET

Samsung

Manufacturer

Samsung

Related datasheet

IRFIZ24A Datasheet, Samsung

Features and benefits