2N6515 Overview
2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage: VCEO= 250V Collector Dissipation: Pulse Width 300 , Duty Cycle 2% IC=1mA, IB=0 }IC=100.
2N6515 Details
| Part number | 2N6515 |
|---|---|
| Datasheet | 2N6515-Samsung.pdf |
| File Size | 42.01 KB |
| Manufacturer | Samsung Semiconductor |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
|
|
