2N6515 - NPN EPITAXIAL SILICON TRANSISTOR

Samsung Semiconductor

Datasheet Details

Part number	2N6515
Manufacturer	Samsung Semiconductor
File Size	42.01 KB
Description	NPN EPITAXIAL SILICON TRANSISTOR
Datasheet	2N6515 Datasheet

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2N6515 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 250 250 6 500 625 150 -55 ~ 150 Unit V V V mA m&&W TO-92 ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions %CCoolllleeccttoorr--EBmasiteteBr rBeraekadkodwonwnVoVlotaltgaege Emitter-Base Breakdown Voltage Collector Cut-off Current %EDmCitCteurrrCeuntt-oGffaCinurrent BVCEO BVCBO BVEBO ICBO IEBO hFE Collector-Emitter Saturation Voltage VCE (sat) Base-Emitter Saturation