2N5089
2N5088/5089
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
- Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V
- Collector Dissipation: PC (max)=625m W
ABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
:2N5088 2N5089 :2N5088 2N5089
VCBO
VCEO
VEBO IC PC TJ TSTG
30 30 25 4.5 50 625 150 -55 ~ 150
Unit
V V V V m A m&&W
TO-92
1.Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA=25 )
Characteristic
Symbol
Collector-Base Breakdown Voltage
:2N5088
%Collector-Emitter
Breakdown
:2N5089 Voltage
:2N5088
:2N5089
Collector Cut-off Current
:2N4403
:2N4402
Base Cut-off Current
%DC Current Gain
:2N5088 :2N5089 :2N5088 :2N5089 :2N5088 :2N5089
%BCaosllee-c Etomr-i Ettemrit Steartu Sraattuiornat Vioonlt Vagoeltage
Current-Base Capacitance
BVCBO BVCEO ICBO IEBO h...
