N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc : 130 W SW50N06 General Description This power MOSFET is.

This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche c.

SW50N06A

SW50N06T

SW50N10

SW500

SW50CPF06

SW5104

SW5123

SW51x

SW52x

SW53x

SW5N60

SW5N80

SW-106

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts