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STU660 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected. D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) S.

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Datasheet Details

Part number STU660
Manufacturer SamHop Microelectronics
File Size 112.95 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STU660 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STU/D660 Ver 2.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 90V ID 5A RDS(ON) (mΩ) Max 724 1014 @VGS=10V @VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. ESD Protected.
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