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SamHop Microelectronics

STU419S Datasheet Preview

STU419S Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

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STU/D419SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-58A
11.5 @ VGS=10V
16 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current-Continuous(Package limited) TC=25°C
ID
-Continuous(Silicon limited)
TC=25°C
-Continuous a
TA=25°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
Maximum Power Dissipation
PD Maximum Power Dissipation a
TC=25°C
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-40
±20
-50
-58
-11
-175
224
70
2.5
-55 to 150
1.8
50
Units
V
V
A
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Sep,15,2008
www.samhop.com.tw




SamHop Microelectronics

STU419S Datasheet Preview

STU419S Datasheet

P-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D419S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-20A
VGS=-4.5V , ID=-17A
VDS=-10V , ID=-20A
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN=3.3 ohm
VDS=-20V,ID=-20A,VGS=-10V
VDS=-20V,ID=-20A,VGS=-4.5V
VDS=-20V,ID=-20A,
VGS=-10V
-1
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is Maximum Continuous Drain-Source Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= -2.0A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,VDD = 30V .(See Figure13)
Typ Max Units
V
1 uA
±10 uA
-1.5 -3
V
9.6 11.5 m ohm
12.5 16 m ohm
9S
3550
710
420
40
70
345
125
87
42
9
20
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-2.0
-0.77 -1.3
A
V
Sep,15,2008
2 www.samhop.com.tw


Part Number STU419S
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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