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S amHop Microelectronics C orp.
S T U408D
J uly.25 2006
www.DataSheet4U.com
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S
( m W ) Max
S uper high dense cell design for low R DS (ON ).
ID
16A
R DS (ON)
R ugged and reliable. TO252-4L package. E S D P rotected.
D1 D2
30 @ V G S = 10V 40 @ V G S =4.5V
D1/D2
G1 G2
S1
G1
S2
TO-252-4L G2
S1
N-ch
S2
N-ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD T J , T S TG
Limit 40 20 16 13.8 50 8 11 7.
STU408D Datasheet
