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S T U407DH
S amHop Microelectronics C orp.
Apr 20 2007
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
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P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-40V
ID
16A
R DS (ON) ( m Ω )
Max
ID
-12A
R DS (ON) ( m Ω )
Max
29 @ V G S = 10V 39 @ V G S = 4.5V
D1
47 @ V G S = -10V 64 @ V G S = -4.5V
D2
40V
D1/D2
G1 G2
S1
G1 S2 G2 TO-252-4L
S1
N-ch
S2
P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C PD Tc= 70 C
N-C hannel P-C hannel 40 20 16 13.8 50 8 11 7.
STU407DH Datasheet
