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SamHop Microelectronics

STU407DH Datasheet Preview

STU407DH Datasheet

Dual Enhancement Mode Field Effect Transistor

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S TU407DH
S amHop Microelectronics C orp.
Apr 20 2007
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m ) Max
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40V 16A
29 @ VGS = 10V
39 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-40V
ID
-12A
R DS (ON) ( m ) Max
47 @ VGS = -10V
64 @ VGS = -4.5V
D1/D2
D1 D2
S1
G1
S2 G2
TO-252-4L
G1 G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 40 -40
V
Gate-S ource Voltage
VGS 20 20
V
25 C 16 -12
Drain C urrent-C ontinuous @ Tc
ID
70 C 13.8 -10
-P ulsed a
IDM 50 -50
A
A
A
Drain-S ource Diode Forward C urrent
IS 8 -6 A
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Tc= 25 C
Tc= 70 C
PD
TJ, TSTG
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
Thermal R esistance, Junction-to-Ambient
R JA
1
11
7.7
-55 to 175
13.6
120
W
C
C /W
C /W




SamHop Microelectronics

STU407DH Datasheet Preview

STU407DH Datasheet

Dual Enhancement Mode Field Effect Transistor

No Preview Available !

S TU407DH
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
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Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =250uA
IDSS VDS =32V, VGS =0V
IGSS VGS = 20V, VDS= 0V
40
V
1 uA
10 uA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.8 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =8A
VGS =4.5V, ID= 6A
21 29 m ohm
29 39 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON)
gFS
VDS = 5V, VGS = 4.5V
VDS =10V, ID= 8A
20
15
A
S
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =20V, VGS = 0V
COSS f =1.0MHZ
CRSS
735 PF
120 PF
70 PF
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
0.36
ohm
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 20V
tr ID = 3 A
tD(O F F )
VGS = 10V
R GEN = 3 ohm
tf
13 ns
15 ns
26 ns
10 ns
Total Gate Charge
Qg VDS =20V, ID =8A,VGS =10V 15 nC
VDS =20V, ID =8A,VGS =4.5V 7.2 nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =20V, ID = 8 A
Qgd VGS =10V
2
2.0 nC
3.8 nC


Part Number STU407DH
Description Dual Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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