• Part: STT10L01
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: SamHop Microelectronics
  • Size: 189.23 KB
Download STT10L01 Datasheet PDF
SamHop Microelectronics
STT10L01
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. 3A R DS(ON) (m Ω) Max 140 @ VGS=10V 225 @ VGS=4.5V STT SERIES SO T - 223 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 3.0 2.4 20 16 TA=25°C TA=70°C 3 1.9 -55 to 150 Units V V A A A m J W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a °C/W Details are subject to change without notice. Aug,05,2010 .samhop..tw Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 u A n A OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current...