STT100
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
STT SERIES SO T
- 223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c
TA=25°C TA=70°C
Limit 100 ±20 1.2 1.0 8 2.25
Units V V A A A m J W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range
TA=25°C TA=70°C
3 1.9 -55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 42 °C/W
Details are subject to change without notice.
Oct,18,2012
.samhop..tw
Ver 3.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250u A VDS=80V , VGS=0V
Min
Typ
Max
Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage...
