Click to expand full text
S T S 2302S
S amHop Microelectronics C orp. S ep. 3 2005
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
4A
R DS (ON)
S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package.
47 @ V G S = 4.5V 60 @ V G S = 2.5V
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 4 15 1.25 1.
STS2302S Datasheet
