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STM6967 - P-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -4A R DS(ON) (m Ω) Max 86 @ VGS=-10V 125 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

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Datasheet Details

Part number STM6967
Manufacturer SamHop Microelectronics
File Size 169.71 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM6967 Datasheet
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Full PDF Text Transcription

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Green Product STM6967 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -4A R DS(ON) (m Ω) Max 86 @ VGS=-10V 125 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit -60 ±20 -4 -3.2 -22 49 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.
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