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STM4880 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 9.6A R DS(ON) (m Ω) Max 17 @ VGS=10V 26 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

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Datasheet Details

Part number STM4880
Manufacturer SamHop Microelectronics
File Size 180.89 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM4880 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com STM4880 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID 9.6A R DS(ON) (m Ω) Max 17 @ VGS=10V 26 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a TA=25°C TA=70°C Limit 30 ±20 9.6 7.7 40 20 Units V V A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.
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