STM4437 - P-Channel Enhancement Mode MOSFET

SamHop Microelectronics

Datasheet Details

Part number	STM4437
Manufacturer	SamHop Microelectronics
File Size	576.23 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	STM4437 Datasheet

📁 Similar Datasheet

STM4437 - P-Channel 30V MOSFET (VBsemi)
STM4433 - P-Channel 30V MOSFET (VBsemi)
STM4439A - P-Channel 30V MOSFET (VBsemi)
STM4417 - P-Channel Enhancement Mode Field Effect Transistor (SamHop)
STM4472 - N-Channel 40V MOSFET (VBsemi)
STM400-05B - RF Power Module (ST Microelectronics)
STM4532 - N- and P-Channel 30V MOSFET (VBsemi)
STM4639 - P-Channel MOSFET (VBsemi)
STM4639T - P-Channel 30V MOSFET (VBsemi)
STM485-C - RS-232 to RS-485 Passive Converter (ETC)

Other Datasheets by SamHop Microelectronics

STM4437A - P-Channel Enhancement Mode Field Effect Transistor
STM4431 - P-Channel Enhancement Mode Field Effect Transistor
STM4432 - N-Channel MOSFET
STM4433 - P-Channel Enhancement Mode MOSFET
STM4433A - P-Channel Enhancement Mode Field Effect Transistor
STM4435 - P-Channel Enhancement Mode Field Effect Transistor
STM4436 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
STM4439 - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text

S T M4437 S amHop Microelectronics C orp. Aug.18 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -30V F E AT UR E S ( m W ) Max ID -10A R DS (ON) S uper high dense cell design for low R DS (ON ). 13 @ V G S = -20V 14 @ V G S = -10V 24 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 25 - 10 - 50 -1.7 2.

Published: Aug 21, 2014 |