STF2455 - N-Channel Enhancement Mode Field Effect Transistor
Datasheet Summary
Features
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S
P IN 1 G
D
T DF N 2X3 (Bottom view)
S.
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Green Product
STF2455
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
6.2 @ VGS=4.5V 6.3 @ VGS=4.0V 24V 13A 6.5 @ VGS=3.7V 7.0 @ VGS=3.1V 8.5 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D D D G S S
P IN 1 G
D
T DF N 2X3 (Bottom view)
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 13 10.4 80
a
Units V V A A A W W °C
Maximum Power Dissipation
1.8 1.
STF2455 Datasheet
