STE334S
STE334S is N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
PIN 1
1 2 3 4
Power Pak 5 x 6
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a
Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 18 14.4 63 3.1 2 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
°C/W
Details are subject to change without notice.
Dec,06,2012
.samhop..tw
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250u A VDS=24V , VGS=0V
30 1 ±100
V u A n A
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g FS Drain-Source On-State Resistance Forward Transconductance b
VDS=VGS , ID=250u A VGS=10V , ID=9A VGS=4.5V , ID=6.7A VDS=10V , ID=9A
1.7 3.8 6.3 30
3 4.7 8.3
V m ohm m ohm S p F p F p F
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS t D(ON) Turn-On Delay Time tr Rise Time t D(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b
VDS=15V,VGS=0V f=1.0MHz
900 284 228
VDD=15V ID=1A VGS=10V RGEN= 6 ohm VDS=15V,ID=9A,VGS=10V VDS=15V,ID=9A,VGS=4.5V VDS=15V,ID=9A, VGS=10V
30 38 71 37 26 13 2.6 7.7 ns ns ns ns n C n C n C n C
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage...
