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STD412S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 22A R DS(ON) (m Ω) Max 26 @ VGS=10V 40 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S.

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Datasheet Details

Part number STD412S
Manufacturer SamHop Microelectronics
File Size 265.00 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet STD412S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STU/D412S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. ID 22A R DS(ON) (m Ω) Max 26 @ VGS=10V 40 @ VGS=4.5V ESD Protected. D D G S G D G S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS ID IDM EAS PD TJ, TSTG MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage TA=25 °C a Drain Current-Continuous TA=70 °C -Pulsed b Avalanche Energy c Limit 40 ±20 22 17.
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