• Part: STD12L01
  • Description: N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 87.64 KB
Download STD12L01 Datasheet PDF
SamHop Microelectronics
STD12L01
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. 12A R DS(ON) (m ) Max 160 @ VGS=10V STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 12 9.6 35 25 TC=25°C TC=70°C 50 32 -55 to 150 Units V V A A A m J W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a a 2.5 50 °C/W °C/W Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Oct,29,2010 .samhop..tw Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250u A VDS=80V , VGS=0V Min 100 Typ Max Units V OFF CHARACTERISTICS BVDSS...