SP8601 Datasheet | SamHop Microelectronics

FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.2 5.8 43 1.47 0.94 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient °C/W Details are subject to change without notice. Jul,18,2014 .samhop..tw Ver 2.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250u A VDS=16V , VGS=0V Min 20 Typ Max Units V u A u A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±8V , VDS=0V 1 ±1 VDS=VGS , ID=1.0m A VGS=4.5V , ID=1.8A VGS=4.0V , ID=1.8A VGS=3.7V , ID=1.8A VGS=3.1V , ID=1.8A VGS=2.5V , ID=1.8A VDS=5V , ID=3.6A 0.5 12.0 12.5 13.5 14.5 18.0 0.95 14.5 15.0 16.0 18.5 22.0 18 1.5 17.5 18.5 20.0 24.5 27.0 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance g FS Forward Transconductance...