• Part: SP3901
  • Description: Dual N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 107.85 KB
Download SP3901 Datasheet PDF
SamHop Microelectronics
SP3901
SP3901 is Dual N-Channel Enhancement Mode Field Effect Transistor manufactured by SamHop Microelectronics.
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit 30 ±20 5.8 4.6 24 18 Units V V A A A m J W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient °C/W Details are subject to change without notice. Jul,18,2013 .samhop..tw Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250u A VDS=24V , VGS=0V 30 1 ±100 V u A n A VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) g FS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250u A VGS=10V , ID=2.9A VGS=4.5V , ID=2.2A VDS=10V , ID=2.9A 2 35 55 11 3 50 80 V m ohm m ohm S p F p F p F DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS t D(ON) Turn-On Delay Time tr Rise Time t D(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 382 61...