SP3900 - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2.

SamHop Microelectronics

Datasheet Details

Part number	SP3900
Manufacturer	SamHop Microelectronics
File Size	107.67 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	SP3900 Datasheet

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Other Datasheets by SamHop Microelectronics

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Full PDF Text Transcription

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Green Product SP3900 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 4.5A R DS(ON) (m Ω) Max 42 @ VGS=10V 74 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit 30 ±20 4.5 3.6 30 16 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 1.47 0.

Published: Oct 16, 2014 |