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Green Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2108
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V
1.2A
811 @ VGS=10V 932 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
PDFN 5x6
PIN1
D2 5 D2 6 D1 7 D1 8
4 G2 3 S2 2 G1 1 S1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM EAS
PD
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c Single Pulse Avalanche Energy d
Maximum Power Dissipation
TA=25°C TA=70°C
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 100 ±20 1.2 0.
SP2108 Datasheet
