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STU312D Datasheet Preview

STU312D Datasheet

Dual Enhancement Mode Field Effect Transistor

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S T U 312DGreen
Product
S amHop Microelectronics C orp.
Oct 08 2008
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
ID R DS (ON) ( m ) Max
24 @ VGS = 10V
30V 18A
36 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-30V
ID
-14A
R DS (ON) ( m ) Max
34 @ VGS = -10V
54 @ VGS = -4.5V
D1/D2
D1 D2
S1
G1
S2 G2
TO-252-4L
G1 G2
S 1 N-ch
S 2 P-ch
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS 30 -30
V
Gate-S ource Voltage
VGS 24 24 V
Drain C urrent-C ontinuous @ Tc
-P ulsed a
25 C
70 C
ID
IDM
18 -14
15 -12
50 -50
A
A
A
Drain-S ource Diode Forward C urrent
IS 10 -6
A
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
Tc= 25 C
Tc= 70 C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
PD
TJ, TSTG
R JC
R JA
1
11
7.7
-55 to 175
13.6
120
W
C
C /W
C /W
Free Datasheet http://www.datasheet-pdf.com/




SamHop

STU312D Datasheet Preview

STU312D Datasheet

Dual Enhancement Mode Field Effect Transistor

No Preview Available !

S TU312D
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
5 OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =250uA
IDSS VDS =24V, VGS =0V
IGSS VGS = 24V, VDS= 0V
30
V
1 uA
100 uA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
1 1.8 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =10A
VGS =4.5V, ID= 8A
18 24 m ohm
24 36 m ohm
On-S tate Drain Current
ID(ON) VDS = 5V, VGS = 4.5V 20
Forward Transconductance
DYNAMIC CHARACTERISTICS b
gFS
VDS =10V, ID= 10A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C IS S
VDS =15V, VGS = 0V
COSS f =1.0MHZ
CRSS
Gate resistance
R g VGS =0V, VDS = 0V, f=1.0MHZ
SWITCHING CHARACTERISTICS b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1 A
tD(O F F )
VGS = 10V
R GEN = 6 ohm
tf
Total Gate Charge
Qg VDS =15V, ID =20A,VGS =10V
Gate-S ource Charge
Gate-Drain Charge
VDS =15V, ID =20A,VGS =4.5V
Qgs VDS =15V, ID = 20 A
Qgd VGS =10V
2
15
640
180
110
0.5
13
12
40
7
13
6.8
1.5
3.5
A
S
PF
PF
PF
ohm
ns
ns
ns
ns
nC
nC
nC
nC
Free Datasheet http://www.datasheet-pdf.com/


Part Number STU312D
Description Dual Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 11 Pages
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